Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance: Preprint

William Nemeth, Steven Harvey, David Young, Matthew Page, Vincenzo LaSalvia, Dawn Findley, Abhijit Kale, San Theingi, Pauls Stradins

Research output: Contribution to conferencePaper


Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce less than 21% TCO-free solar cells.
Original languageAmerican English
Number of pages8
StatePublished - 2019
EventSiliconPV 2019 - Leuven, Belgium
Duration: 10 Apr 201911 Apr 2019


ConferenceSiliconPV 2019
CityLeuven, Belgium

Bibliographical note

See NREL/CP-5900-74941 for paper as published in proceedings

NREL Publication Number

  • NREL/CP-5900-73677


  • chemical elements
  • contact passivation
  • semiconductor materials
  • tunneling SiO2
  • UV-O3 treatment


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