Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance: Preprint

William Nemeth; Steven Harvey; David Young; Matthew Page; Vincenzo LaSalvia; Dawn Findley; Abhijit Kale; San Theingi; Pauls Stradins

Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance: Preprint

William Nemeth, Steven Harvey, David Young, Matthew Page, Vincenzo LaSalvia, Dawn Findley, Abhijit Kale, San Theingi, Pauls Stradins

Research output: Contribution to conference › Paper

Abstract

Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce less than 21% TCO-free solar cells.

Original language	American English
Number of pages	8
State	Published - 2019
Event	SiliconPV 2019 - Leuven, Belgium Duration: 10 Apr 2019 → 11 Apr 2019

Conference

Conference	SiliconPV 2019
City	Leuven, Belgium
Period	10/04/19 → 11/04/19

Bibliographical note

See NREL/CP-5900-74941 for paper as published in proceedings

NREL Publication Number

NREL/CP-5900-73677

Keywords

chemical elements
contact passivation
semiconductor materials
tunneling SiO2
UV-O3 treatment

Access to Document

https://www.nrel.gov/docs/fy19osti/73677.pdf

Cite this

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title = "Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance: Preprint",

abstract = "Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce less than 21% TCO-free solar cells.",

keywords = "chemical elements, contact passivation, semiconductor materials, tunneling SiO2, UV-O3 treatment",

author = "William Nemeth and Steven Harvey and David Young and Matthew Page and Vincenzo LaSalvia and Dawn Findley and Abhijit Kale and San Theingi and Pauls Stradins",

note = "See NREL/CP-5900-74941 for paper as published in proceedings; SiliconPV 2019 ; Conference date: 10-04-2019 Through 11-04-2019",

year = "2019",

language = "American English",

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TY - CONF

T1 - Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance: Preprint

AU - Nemeth, William

AU - Harvey, Steven

AU - Young, David

AU - Page, Matthew

AU - LaSalvia, Vincenzo

AU - Findley, Dawn

AU - Kale, Abhijit

AU - Theingi, San

AU - Stradins, Pauls

N1 - See NREL/CP-5900-74941 for paper as published in proceedings

PY - 2019

Y1 - 2019

N2 - Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce less than 21% TCO-free solar cells.

AB - Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce less than 21% TCO-free solar cells.

KW - chemical elements

KW - contact passivation

KW - semiconductor materials

KW - tunneling SiO2

KW - UV-O3 treatment

M3 - Paper

T2 - SiliconPV 2019

Y2 - 10 April 2019 through 11 April 2019

ER -

Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance: Preprint

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this