Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance

William Nemeth; Steven Harvey; David Young; Matthew Page; Vincenzo LaSalvia; Dawn Findley; Abhijit Kale; San Theingi; Pauls Stradins

doi:10.1063/1.5123857

Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance

William Nemeth, Steven Harvey, David Young, Matthew Page, Vincenzo LaSalvia, Dawn Findley, Abhijit Kale, San Theingi, Pauls Stradins

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce >21% TCO-free solar cells.

Original language	American English
Number of pages	5
DOIs	https://doi.org/10.1063/1.5123857 https://doi.org/10.1063/1.5123857
State	Published - 27 Aug 2019
Event	9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019 - Leuven, Belgium Duration: 8 Apr 2019 → 10 Apr 2019

Conference

Conference	9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019
Country/Territory	Belgium
City	Leuven
Period	8/04/19 → 10/04/19

Bibliographical note

See NREL/CP-5900-73677 for preprint

NREL Publication Number

NREL/CP-5900-74941

Keywords

chemical elements
contact passivation
semiconductor materials
tunneling SiO2
UV-O3 treatment

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Nemeth, W., Harvey, S., Young, D., Page, M., LaSalvia, V., Findley, D., Kale, A., Theingi, S., & Stradins, P. (2019). Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance. Paper presented at 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019, Leuven, Belgium. https://doi.org/10.1063/1.5123857, https://doi.org/10.1063/1.5123857

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title = "Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance",

abstract = "Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce >21% TCO-free solar cells.",

keywords = "chemical elements, contact passivation, semiconductor materials, tunneling SiO2, UV-O3 treatment",

author = "William Nemeth and Steven Harvey and David Young and Matthew Page and Vincenzo LaSalvia and Dawn Findley and Abhijit Kale and San Theingi and Pauls Stradins",

note = "See NREL/CP-5900-73677 for preprint; 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019 ; Conference date: 08-04-2019 Through 10-04-2019",

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doi = "10.1063/1.5123857",

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Nemeth, W , Harvey, S , Young, D , Page, M, LaSalvia, V, Findley, D, Kale, A, Theingi, S & Stradins, P 2019, 'Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance', Paper presented at 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019, Leuven, Belgium, 8/04/19 - 10/04/19. https://doi.org/10.1063/1.5123857, https://doi.org/10.1063/1.5123857

TY - CONF

T1 - Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance

AU - Nemeth, William

AU - Harvey, Steven

AU - Young, David

AU - Page, Matthew

AU - LaSalvia, Vincenzo

AU - Findley, Dawn

AU - Kale, Abhijit

AU - Theingi, San

AU - Stradins, Pauls

N1 - See NREL/CP-5900-73677 for preprint

PY - 2019/8/27

Y1 - 2019/8/27

N2 - Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce >21% TCO-free solar cells.

AB - Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce >21% TCO-free solar cells.

KW - chemical elements

KW - contact passivation

KW - semiconductor materials

KW - tunneling SiO2

KW - UV-O3 treatment

UR - http://www.scopus.com/inward/record.url?scp=85071556976&partnerID=8YFLogxK

U2 - 10.1063/1.5123857

DO - 10.1063/1.5123857

M3 - Paper

AN - SCOPUS:85071556976

T2 - 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019

Y2 - 8 April 2019 through 10 April 2019

ER -

Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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