Abstract
Atomic force microscopy (AFM) can be used to image cross-sections of thin-film samples. So far, however, it has mainly been used to study cross- sections of epitaxial systems or integrated circuits on crystalline substrates. In this paper, we show that AFM is a powerful tool to image fractured cross-sections of polycrystalline thin films deposited on crystalline and non-crystalline substrates, yielding unique information on the three-dimensional properties of the cross-sections, with a spatial resolution in the nm range. Original images of three different heterostructure systems are presented: Si(wafer)/SnO2/CdS/CdTe, glass/Mo/Cu(In,Ga)Se2/CdS/ZnO, and glass/SnO2/WO3. We discuss the results by comparing AFM and scanning electron microscopy (SEM) images, and explain, for the different materials, why the AFM provides useful additional information. (C) 2000 Elsevier Science B.V.
| Original language | American English |
|---|---|
| Pages (from-to) | 61-71 |
| Number of pages | 11 |
| Journal | Ultramicroscopy |
| Volume | 85 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2000 |
NREL Publication Number
- NREL/JA-520-27827
Keywords
- Atomic force microscopy
- Cross-section
- Polycrystalline film
- Scanning electron microscopy