Cross-Sectional, Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells

T. A. Gessert; M. J. Romero; R. G. Dhere; S. Johnston; A. Duda

Cross-Sectional, Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells

T. A. Gessert, M. J. Romero, R. G. Dhere, S. Johnston, A. Duda

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

Cross-sectional spectroscopic cathodoluminescence (CL), light current-voltage (LIV), and capacitance-voltage (CV) measurements are used to study the formation of CdS/CdTe devices contacted using ion-beam milling and sputter deposition of ZnTe:Cu/Ti layers. Prior to contacting, CL reveals significant differences in radiative recombination due to the purity of the CdCl ₂, source of device material, and the thickness of the CdTe. After contacting, differences in LIV and CV are correlated to CdTe thickness, These differences support other studies that indicate diffusion from the contact assists in device formation. Although more subtle, differences in radiative recombination are also observed after contacting and suggest separate effects from Cl and Cu diffusion from the CdCl ₂ and contacting process.

Original language	American English
Pages	348-351
Number of pages	4
State	Published - 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

NREL Publication Number

NREL/CP-520-33060

Cite this

@conference{6259dce4db6142be89c1addd10eedc62,

title = "Cross-Sectional, Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells",

abstract = "Cross-sectional spectroscopic cathodoluminescence (CL), light current-voltage (LIV), and capacitance-voltage (CV) measurements are used to study the formation of CdS/CdTe devices contacted using ion-beam milling and sputter deposition of ZnTe:Cu/Ti layers. Prior to contacting, CL reveals significant differences in radiative recombination due to the purity of the CdCl 2, source of device material, and the thickness of the CdTe. After contacting, differences in LIV and CV are correlated to CdTe thickness, These differences support other studies that indicate diffusion from the contact assists in device formation. Although more subtle, differences in radiative recombination are also observed after contacting and suggest separate effects from Cl and Cu diffusion from the CdCl 2 and contacting process.",

author = "Gessert, {T. A.} and Romero, {M. J.} and Dhere, {R. G.} and S. Johnston and A. Duda",

year = "2003",

language = "American English",

pages = "348--351",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

TY - CONF

T1 - Cross-Sectional, Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells

AU - Gessert, T. A.

AU - Romero, M. J.

AU - Dhere, R. G.

AU - Johnston, S.

AU - Duda, A.

PY - 2003

Y1 - 2003

N2 - Cross-sectional spectroscopic cathodoluminescence (CL), light current-voltage (LIV), and capacitance-voltage (CV) measurements are used to study the formation of CdS/CdTe devices contacted using ion-beam milling and sputter deposition of ZnTe:Cu/Ti layers. Prior to contacting, CL reveals significant differences in radiative recombination due to the purity of the CdCl 2, source of device material, and the thickness of the CdTe. After contacting, differences in LIV and CV are correlated to CdTe thickness, These differences support other studies that indicate diffusion from the contact assists in device formation. Although more subtle, differences in radiative recombination are also observed after contacting and suggest separate effects from Cl and Cu diffusion from the CdCl 2 and contacting process.

AB - Cross-sectional spectroscopic cathodoluminescence (CL), light current-voltage (LIV), and capacitance-voltage (CV) measurements are used to study the formation of CdS/CdTe devices contacted using ion-beam milling and sputter deposition of ZnTe:Cu/Ti layers. Prior to contacting, CL reveals significant differences in radiative recombination due to the purity of the CdCl 2, source of device material, and the thickness of the CdTe. After contacting, differences in LIV and CV are correlated to CdTe thickness, These differences support other studies that indicate diffusion from the contact assists in device formation. Although more subtle, differences in radiative recombination are also observed after contacting and suggest separate effects from Cl and Cu diffusion from the CdCl 2 and contacting process.

UR - http://www.scopus.com/inward/record.url?scp=6344243381&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:6344243381

SP - 348

EP - 351

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Cross-Sectional, Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells

Abstract

Conference

NREL Publication Number

Other files and links

Fingerprint

Cite this