Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells: Final Report, 1 October 2003 - 15 January 2008

Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells: Final Report, 1 October 2003 - 15 January 2008

Research output: NREL › Subcontract Report

Abstract

Hardness, elastic modulus, and fracture toughness of low and high carrier-lietime regions in polycrystalline silicon were evaluated using the nanoindentation technique.

Original language	American English
Number of pages	8
State	Published - 2008

Bibliographical note

Work performed by North Carolina State University, Raleigh, North Carolina

NREL Publication Number

NREL/SR-520-44375

Keywords

crystal growth
grain boundary (GBS)
high efficiency
high yield
light element impurities
nanoindentation
polycrystalline silicon
PV
solar cells
wafer process

Access to Document

https://www.nrel.gov/docs/fy09osti/44375.pdf

Cite this

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title = "Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells: Final Report, 1 October 2003 - 15 January 2008",

abstract = "Hardness, elastic modulus, and fracture toughness of low and high carrier-lietime regions in polycrystalline silicon were evaluated using the nanoindentation technique.",

keywords = "crystal growth, grain boundary (GBS), high efficiency, high yield, light element impurities, nanoindentation, polycrystalline silicon, PV, solar cells, wafer process",

author = "NREL",

note = "Work performed by North Carolina State University, Raleigh, North Carolina",

year = "2008",

language = "American English",

type = "Other",

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TY - GEN

T1 - Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells: Final Report, 1 October 2003 - 15 January 2008

AU - NREL, null

N1 - Work performed by North Carolina State University, Raleigh, North Carolina

PY - 2008

Y1 - 2008

N2 - Hardness, elastic modulus, and fracture toughness of low and high carrier-lietime regions in polycrystalline silicon were evaluated using the nanoindentation technique.

AB - Hardness, elastic modulus, and fracture toughness of low and high carrier-lietime regions in polycrystalline silicon were evaluated using the nanoindentation technique.

KW - crystal growth

KW - grain boundary (GBS)

KW - high efficiency

KW - high yield

KW - light element impurities

KW - nanoindentation

KW - polycrystalline silicon

KW - PV

KW - solar cells

KW - wafer process

M3 - Subcontract Report

ER -

Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells: Final Report, 1 October 2003 - 15 January 2008

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this