Abstract
Hardness, elastic modulus, and fracture toughness of low and high carrier-lietime regions in polycrystalline silicon were evaluated using the nanoindentation technique.
| Original language | American English |
|---|---|
| Publisher | National Renewable Energy Laboratory (NREL) |
| Number of pages | 8 |
| State | Published - 2008 |
Bibliographical note
Work performed by North Carolina State University, Raleigh, North CarolinaNREL Publication Number
- NREL/SR-520-44375
Keywords
- crystal growth
- grain boundary (GBS)
- high efficiency
- high yield
- light element impurities
- nanoindentation
- polycrystalline silicon
- PV
- solar cells
- wafer process