Abstract
Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contactto the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an independently confirmed efficiency of 19.1%. This is the best reported performance for a cell of this configuration. We also made progress on p-type CZ wafers and achieved 18.7% independently confirmed efficiency with little degradation under prolong illumination. Our best Voc for a p-type SHJ cell is0.688 V, which is close to the 691 mV we achieved for SHJ cells on n type c-Si wafers.
Original language | American English |
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Number of pages | 8 |
State | Published - 2008 |
Event | 33rd IEEE Photovoltaic Specialists Conference - San Diego, California Duration: 11 May 2008 → 16 May 2008 |
Conference
Conference | 33rd IEEE Photovoltaic Specialists Conference |
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City | San Diego, California |
Period | 11/05/08 → 16/05/08 |
NREL Publication Number
- NREL/CP-520-42554
Keywords
- float zone (FZ)
- hot-wire chemical vapor deposition (HWCVD)
- PV
- SHJ
- silicon heterojunction
- silicon heterojunction
- solar cells
- wafer