Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint

Research output: Contribution to conferencePaper

Abstract

Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contactto the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an independently confirmed efficiency of 19.1%. This is the best reported performance for a cell of this configuration. We also made progress on p-type CZ wafers and achieved 18.7% independently confirmed efficiency with little degradation under prolong illumination. Our best Voc for a p-type SHJ cell is0.688 V, which is close to the 691 mV we achieved for SHJ cells on n type c-Si wafers.
Original languageAmerican English
Number of pages8
StatePublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference - San Diego, California
Duration: 11 May 200816 May 2008

Conference

Conference33rd IEEE Photovoltaic Specialists Conference
CitySan Diego, California
Period11/05/0816/05/08

NREL Publication Number

  • NREL/CP-520-42554

Keywords

  • float zone (FZ)
  • hot-wire chemical vapor deposition (HWCVD)
  • PV
  • SHJ
  • silicon heterojunction
  • silicon heterojunction
  • solar cells
  • wafer

Fingerprint

Dive into the research topics of 'Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint'. Together they form a unique fingerprint.

Cite this