Crystallographic Control in Thin-Layer Silicon Depositions by Atmospheric-Pressure Iodine Vapor Transport

T. H. Wang, T. F. Ciszek, M. R. Page

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


Silicon thin layers that are either highly textured polycrystalline, randomly oriented polycrystalline, or epitaxial have been deposited by the technique of atmospheric-pressure iodine vapor transport on silicon or non-silicon substrates. Strongly [1 1 0]-textured polycrystalline silicon films are obtained by starting with a relatively low starting substrate temperature of 700°C, to increase nucleation density, then ramping up to 900°C at the end to increase growth rate. Alternatively, if a higher constant temperature of 900°C is used, we obtain polycrystalline silicon layers with randomly oriented large grains of ∼ 20μm in average size. When a still higher initial substrate temperature of 1000°C is used to eliminate condensation of silicon iodides at the interface, high-quality epitaxial silicon layers are grown on silicon substrates.

Original languageAmerican English
Pages (from-to)183-189
Number of pages7
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-33277


  • A1. Interfaces
  • A3. Atmospheric-pressure iodine vapor transport
  • A3. Polycrystalline deposition
  • B2. Semiconducting silicon


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