Cu-Local Structures and Their Relation with Nanoscale Electrical Performance in CdTe

Eric Colegrove, Srisuda Rojsatien, Trumann Walker, Tara Nietzold, Barry Lai, Michael Stuckelberger, Arun Kanakkithodi, Maria Chan, Mariana Bertoni

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations


For decades, copper has been introduced in CdTe devices to improve overall performance (open circuit voltage, fill factor, and series resistance). While multiple articles have reported on Cu-based defects, very little is known about how the local structure around the copper atom affects electrical performance. Using X-ray Absorption Near Edge Structure (XANES) coupled with X-ray microscopy we investigate good and poor performing region in Cu-doped CdTe devices. Our XANES coupled with theoretical standards by FEFF9 suggest that CU2Te phase and CuCdmay be responsible for the high electrical performance of the regions under study. This correlation of structure-performance at the nanoscale offers a unique framework to understand and tune processes with deep implications to the overall electrical performance of the solar cell.

Original languageAmerican English
Number of pages5
StatePublished - 14 Jun 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020


Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

  • NREL/CP-5K00-79501


  • CdTe
  • CuxTe XANES
  • FEFF9
  • XBIC


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