Abstract
In this study, polycrystalline Cu-foil substrates are exposed to elemental Te vapor at substrate temperatures below 373 K. Auger electron spectroscopy measurements indicate that copper-telluride films are formed at the substrate surface that have a 2:1 Cu-to-Te ratio, as predicted by the Cu-Te phase diagram. When these films are annealed above about 700 K in vacuum, Te desorbs from the substrate with zero-order kinetics. An analysis of Te-desorption traces that assumes the reaction Cu2Te(s) → 2Cu(s) + αTe(ν) + 1/2(1 - α)Te2(ν) finds a thermal-decomposition activation energy of 217 ± 3 kJ mol- 1. These Te-desorption data are compared to the Te impingement rate calculated from Cu2Te equilibrium vapor-pressure data from the literature and found to be in excellent agreement.
Original language | American English |
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Pages (from-to) | 7886-7891 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 515 |
Issue number | 20-21 |
DOIs | |
State | Published - 2007 |
NREL Publication Number
- NREL/JA-520-40005
Keywords
- Copper telluride
- Evaporation and sublimation
- In situ characterization
- Photovoltaics
- Polycrystalline thin films
- Surface chemical reaction
- Surface thermodynamics
- Thermal desorption