Abstract
We have fabricated 13.7%-efficient CuIn1-xGaxSe2 (CIGS)-based devices from electrodeposited precursors. As-deposited electrodeposited precursors are Cu-rich films. Additional In, Ga, and Se were added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Three devices with Ga/In+Ga) ratio of 0.16, 0.26, and 0.39 were fabricated fromelectrodeposited precursors. The films/devices have been characterized by inductive-coupled plasma spectrometry, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response. The electrodeposited device parameters are compared with those of a 17.7% physical vapor deposited device.
| Original language | American English |
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| Pages | 90-95 |
| Number of pages | 6 |
| State | Published - 1997 |
| Event | Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XV from the SPIE Annual Meeting - San Diego, California Duration: 28 Jul 1997 → 29 Jul 1997 |
Conference
| Conference | Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XV from the SPIE Annual Meeting |
|---|---|
| City | San Diego, California |
| Period | 28/07/97 → 29/07/97 |
NREL Publication Number
- NREL/CP-520-24400
