Cu(In,Ga)Se2 Solar Cells Measured Under Low Flux Optical Concentration

James S. Ward; Brian Egaas; Rommel Noufi; Miguel Contreras; Kannan Ramanathan; Carl Osterwald; Keith Emery

doi:10.1109/PVSC.2014.6925546

Cu(In,Ga)Se2 Solar Cells Measured Under Low Flux Optical Concentration

James S. Ward, Brian Egaas, Rommel Noufi, Miguel Contreras, Kannan Ramanathan, Carl Osterwald, Keith Emery

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

14 Scopus Citations

Abstract

The behavior of Cu(In, Ga)Se₂ (CIGS) solar cells under low flux concentration is being investigated for two complementary reasons. First, pairing photovoltaic devices with inexpensive low flux optical concentration elements can be a rational pathway towards systems that yield a low levelized cost of electricity (LCE). Second, characterization of photovoltaic films under elevated flux levels can be an effective tool for helping to understand the nature of recombination and other parasitic loss mechanisms in these device structures. In this paper we report on a CIGS device that achieved a record efficiency of 23.3% at 14.7 Suns optical concentration and outline a strategy for future work intended to use characterization of devices under elevated flux to explore the physical mechanisms currently limiting the performance of CI(G)S solar cells.

Original language	American English
Pages	2934-2937
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2014.6925546 https://doi.org/10.1109/PVSC.2014.6925546
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5J00-61330

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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abstract = "The behavior of Cu(In, Ga)Se2 (CIGS) solar cells under low flux concentration is being investigated for two complementary reasons. First, pairing photovoltaic devices with inexpensive low flux optical concentration elements can be a rational pathway towards systems that yield a low levelized cost of electricity (LCE). Second, characterization of photovoltaic films under elevated flux levels can be an effective tool for helping to understand the nature of recombination and other parasitic loss mechanisms in these device structures. In this paper we report on a CIGS device that achieved a record efficiency of 23.3% at 14.7 Suns optical concentration and outline a strategy for future work intended to use characterization of devices under elevated flux to explore the physical mechanisms currently limiting the performance of CI(G)S solar cells.",

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Ward, JS, Egaas, B, Noufi, R, Contreras, M, Ramanathan, K, Osterwald, C & Emery, K 2014, 'Cu(In,Ga)Se2 Solar Cells Measured Under Low Flux Optical Concentration', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 2934-2937. https://doi.org/10.1109/PVSC.2014.6925546, https://doi.org/10.1109/PVSC.2014.6925546

TY - CONF

T1 - Cu(In,Ga)Se2 Solar Cells Measured Under Low Flux Optical Concentration

AU - Ward, James S.

AU - Egaas, Brian

AU - Noufi, Rommel

AU - Contreras, Miguel

AU - Ramanathan, Kannan

AU - Osterwald, Carl

AU - Emery, Keith

PY - 2014/10/15

Y1 - 2014/10/15

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AB - The behavior of Cu(In, Ga)Se2 (CIGS) solar cells under low flux concentration is being investigated for two complementary reasons. First, pairing photovoltaic devices with inexpensive low flux optical concentration elements can be a rational pathway towards systems that yield a low levelized cost of electricity (LCE). Second, characterization of photovoltaic films under elevated flux levels can be an effective tool for helping to understand the nature of recombination and other parasitic loss mechanisms in these device structures. In this paper we report on a CIGS device that achieved a record efficiency of 23.3% at 14.7 Suns optical concentration and outline a strategy for future work intended to use characterization of devices under elevated flux to explore the physical mechanisms currently limiting the performance of CI(G)S solar cells.

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T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Cu(In,Ga)Se2 Solar Cells Measured Under Low Flux Optical Concentration

Abstract

Conference

Bibliographical note

NREL Publication Number

UN SDGs

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