Cu(In,Ga)Se2 Thin-Film Evolution During Growth - A Photoluminescence Study: Preprint

    Research output: Contribution to conferencePaper


    This conference paper describes the in-depth understanding of the defect formation and resulting changes in material quality occurring during the Cu(In,Ga)Se2 growth process is vital to the successful and widespread use of this photovoltaic material. In an attempt to develop such an understanding, we investigated the growth of Cu(In,Ga)Se2 thin-films from (In,Ga)2Se3 precursors. This was achievedby using energy- and time-resolved photoluminescence spectroscopies to characterize a series of thin-films, each removed at a different point along the reaction pathway of the 'three-stage' growth process. The resulting thin-films are representative of the absorber layer as it proceeds from a Cu-rich to In(Ga)-rich state. The experimental results support a growth model incorporating defectchanges in the dominant defect states and improvement in the recombination lifetime during this final stage of the growth process as the material transitions to a Cu-poor phase.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2002
    Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
    Duration: 20 May 200224 May 2002


    Conference29th IEEE PV Specialists Conference
    CityNew Orleans, Louisiana

    Bibliographical note

    Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana

    NREL Publication Number

    • NREL/CP-520-31427


    • activation energy
    • capacitance voltage (CV)
    • minority-carrier
    • open-circuit voltages
    • photoluminescence (PL)
    • PV
    • temperature-dependent
    • three-state growth process
    • time-resolved photoluminescence (TRPL)


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