Cu(In,Ga)Se2 Thin-Film Evolution During Growth - A Photoluminescence Study

Brian M. Keyes, P. Dippo, W. Metzger, J. AbuShama, Rommel Noufi

Research output: Contribution to conferencePaperpeer-review

14 Scopus Citations


An in-depth understanding of the defect formation and resulting changes in material quality occurring during the Cu(In,Ga)Se2 growth process is vital to the successful and widespread use of this photovoltaic material. In an attempt to develop such an understanding, we investigated the growth of Cu(In,Ga)Se2 thin films from (ln,Ga)2Se3 precursors. This was achieved by using energy- and time-resolved photoluminescence spectroscopies to characterize a series of thin films, each removed at a different point along the reaction pathway of the "three-stage" growth process. The resulting thin films are representative of the absorber layer as it proceeds from a Cu-rich to Cu-poor state. The experimental results support a growth model incorporating changes in the dominant defect states and improvement in the recombination lifetime during this final stage of the growth process as the material transitions to a Cu-poor phase.

Original languageAmerican English
Number of pages4
StatePublished - 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 19 May 200224 May 2002


Conference29th IEEE Photovoltaic Specialists Conference
Country/TerritoryUnited States
CityNew Orleans, LA

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-31427

NREL Publication Number

  • NREL/CP-520-33714


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