Cu(In,Ga)Se2 Thin-Film Solar Cells with ZnS(O,OH), Zn-Cd-S(O,OH), and CdS Buffer Layers

R. N. Bhattacharya, K. Ramanathan, L. Gedvilas, B. Keyes

Research output: Contribution to journalArticlepeer-review

59 Scopus Citations


Cu(In,Ga)Se2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) ZnS(O,OH), Zn-Cd-S(O,OH), and CdS buffer layers are discussed in this paper. The device performances are compared by applying CBD ZnS(O,OH), CBD Zn-Cd-S(O,OH), and CBD CdS buffer layers on similar CIGS absorbers. The CN impurities in CBD ZnS(O,OH) are identified with Fourier transform infrared spectroscopy (FTIR) techniques. The impurities containing carbon-nitrogen bonds are most likely cyanamide (NCN2-) or thiocyanate (SCN-), which resulted from the chemical reaction of thiourea and ammonia.

Original languageAmerican English
Pages (from-to)1862-1864
Number of pages3
JournalJournal of Physics and Chemistry of Solids
Issue number11
StatePublished - 2005

NREL Publication Number

  • NREL/JA-590-37051


  • analysis
  • CIGS
  • fourier transform infrared spectroscopy (FTIR)
  • photovoltaic (PV)
  • solar cells
  • thin film


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