Cu(In,Ga)Se2 Thin Films and Solar Cells Prepared by Selenization of Metallic Precursors

doi:10.1116/1.580056

Cu(In,Ga)Se2 Thin Films and Solar Cells Prepared by Selenization of Metallic Precursors

Research output: Contribution to journal › Article

Abstract

CuIn(1-x)GaxSe2 (CIGS) thin films with Ga ratio, x, ranging from 0.55 to 0.75 were grown on Mo/glass substrates by the selenization of metallic precursors in a H2Se atmosphere. Without a postdeposition annealing step the films were found to have a highly graded composition that became Ga rich near the absorber/Mo interface. A high-temperature annealing step promoted diffusion of Ga to the surfaceregion of the films. These absorbers were used to fabricate glass/Mo/CIGS/CdS/ZnO thin-film solar cells with open-circuit voltages ranging from 0.4 to 0.74 V and efficiencies approaching 12%. Devices, as well as the absorber layers, were characterized.

Original language	American English
Pages (from-to)	2251-2256
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	14
Issue number	4
DOIs	https://doi.org/10.1116/1.580056
State	Published - 1996

Bibliographical note

Work performed by International Solar Electric Technology, Inglewood, California; Colorado State University, Fort Collins, Colorado; and the National Renewable Energy Laboratory, Golden, Colorado

NREL Publication Number

NREL/JA-21743

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10.1116/1.580056

Cite this

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title = "Cu(In,Ga)Se2 Thin Films and Solar Cells Prepared by Selenization of Metallic Precursors",

abstract = "CuIn(1-x)GaxSe2 (CIGS) thin films with Ga ratio, x, ranging from 0.55 to 0.75 were grown on Mo/glass substrates by the selenization of metallic precursors in a H2Se atmosphere. Without a postdeposition annealing step the films were found to have a highly graded composition that became Ga rich near the absorber/Mo interface. A high-temperature annealing step promoted diffusion of Ga to the surfaceregion of the films. These absorbers were used to fabricate glass/Mo/CIGS/CdS/ZnO thin-film solar cells with open-circuit voltages ranging from 0.4 to 0.74 V and efficiencies approaching 12%. Devices, as well as the absorber layers, were characterized.",

author = "NREL",

note = "Work performed by International Solar Electric Technology, Inglewood, California; Colorado State University, Fort Collins, Colorado; and the National Renewable Energy Laboratory, Golden, Colorado",

year = "1996",

doi = "10.1116/1.580056",

language = "American English",

volume = "14",

pages = "2251--2256",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4",

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TY - JOUR

T1 - Cu(In,Ga)Se2 Thin Films and Solar Cells Prepared by Selenization of Metallic Precursors

AU - NREL, null

N1 - Work performed by International Solar Electric Technology, Inglewood, California; Colorado State University, Fort Collins, Colorado; and the National Renewable Energy Laboratory, Golden, Colorado

PY - 1996

Y1 - 1996

N2 - CuIn(1-x)GaxSe2 (CIGS) thin films with Ga ratio, x, ranging from 0.55 to 0.75 were grown on Mo/glass substrates by the selenization of metallic precursors in a H2Se atmosphere. Without a postdeposition annealing step the films were found to have a highly graded composition that became Ga rich near the absorber/Mo interface. A high-temperature annealing step promoted diffusion of Ga to the surfaceregion of the films. These absorbers were used to fabricate glass/Mo/CIGS/CdS/ZnO thin-film solar cells with open-circuit voltages ranging from 0.4 to 0.74 V and efficiencies approaching 12%. Devices, as well as the absorber layers, were characterized.

AB - CuIn(1-x)GaxSe2 (CIGS) thin films with Ga ratio, x, ranging from 0.55 to 0.75 were grown on Mo/glass substrates by the selenization of metallic precursors in a H2Se atmosphere. Without a postdeposition annealing step the films were found to have a highly graded composition that became Ga rich near the absorber/Mo interface. A high-temperature annealing step promoted diffusion of Ga to the surfaceregion of the films. These absorbers were used to fabricate glass/Mo/CIGS/CdS/ZnO thin-film solar cells with open-circuit voltages ranging from 0.4 to 0.74 V and efficiencies approaching 12%. Devices, as well as the absorber layers, were characterized.

U2 - 10.1116/1.580056

DO - 10.1116/1.580056

M3 - Article

SN - 0734-2101

VL - 14

SP - 2251

EP - 2256

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Cu(In,Ga)Se2 Thin Films and Solar Cells Prepared by Selenization of Metallic Precursors

Abstract

Bibliographical note

NREL Publication Number

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