Cu(In,Ga)Se2 Thin Films and Solar Cells Prepared by Selenization of Metallic Precursors

    Research output: Contribution to journalArticle


    CuIn(1-x)GaxSe2 (CIGS) thin films with Ga ratio, x, ranging from 0.55 to 0.75 were grown on Mo/glass substrates by the selenization of metallic precursors in a H2Se atmosphere. Without a postdeposition annealing step the films were found to have a highly graded composition that became Ga rich near the absorber/Mo interface. A high-temperature annealing step promoted diffusion of Ga to the surfaceregion of the films. These absorbers were used to fabricate glass/Mo/CIGS/CdS/ZnO thin-film solar cells with open-circuit voltages ranging from 0.4 to 0.74 V and efficiencies approaching 12%. Devices, as well as the absorber layers, were characterized.
    Original languageAmerican English
    Pages (from-to)2251-2256
    Number of pages6
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Issue number4
    StatePublished - 1996

    Bibliographical note

    Work performed by International Solar Electric Technology, Inglewood, California; Colorado State University, Fort Collins, Colorado; and the National Renewable Energy Laboratory, Golden, Colorado

    NREL Publication Number

    • NREL/JA-21743


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