Abstract
We examine CuPt-B atomic sublattice ordering in Ga0.51In0.49P (GaInP) and Ga0.47In0.53As (GaInAs) III-V alloy films grown by atmospheric- and low-pressure metalorganic chemical vapor deposition on singular and vicinal (001) substrates. The influences of growth conditions and substrate miscut on double- and single-variant ordered microstructures are investigated using transmission electronmicroscopy (TEM). Relatively thick (>1-2 mm) double-variant ordered GaInP and GaInAs films show complementary superdomain formation. Single-variant ordered films on <111>B-miscut substrates contain single-phase domains, separated by antiphase boundaries (APBs). The appearance of APBs in TEM dark-field images is anticipated from electron diffraction theory.
| Original language | American English |
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| Number of pages | 9 |
| State | Published - 2000 |
| Event | Materials Research Society Fall Meeting - Boston, Massachusetts Duration: 29 Nov 1999 → 3 Dec 1999 |
Conference
| Conference | Materials Research Society Fall Meeting |
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| City | Boston, Massachusetts |
| Period | 29/11/99 → 3/12/99 |
NREL Publication Number
- NREL/CP-520-27699