CuPt-B Ordered Microstructures in GaInP and GaInAs Films

Research output: Contribution to conferencePaper

Abstract

We examine CuPt-B atomic sublattice ordering in Ga0.51In0.49P (GaInP) and Ga0.47In0.53As (GaInAs) III-V alloy films grown by atmospheric- and low-pressure metalorganic chemical vapor deposition on singular and vicinal (001) substrates. The influences of growth conditions and substrate miscut on double- and single-variant ordered microstructures are investigated using transmission electronmicroscopy (TEM). Relatively thick (>1-2 mm) double-variant ordered GaInP and GaInAs films show complementary superdomain formation. Single-variant ordered films on <111>B-miscut substrates contain single-phase domains, separated by antiphase boundaries (APBs). The appearance of APBs in TEM dark-field images is anticipated from electron diffraction theory.
Original languageAmerican English
Number of pages9
StatePublished - 2000
EventMaterials Research Society Fall Meeting - Boston, Massachusetts
Duration: 29 Nov 19993 Dec 1999

Conference

ConferenceMaterials Research Society Fall Meeting
CityBoston, Massachusetts
Period29/11/993/12/99

NREL Publication Number

  • NREL/CP-520-27699

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