Abstract
We have fabricated a series of Gax In1-x P samples over the compositional range 0.51<x<0.76 on GaAs substrates. The samples were prepared by first growing a thick step-graded layer of GaAs1-y P y to bridge the lattice misfit between the Gax In 1-x P layers and the GaAs substrate. The order parameter was tuned using a dilute antimony surfactant during growth. The composition, strain, and order parameter of each sample were characterized by x-ray diffraction, and the bandgap was measured by photoluminescence. We find good agreement between the experimentally measured bandgaps and theoretically modeled curves.
Original language | American English |
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Article number | Article No. 063525 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 106 |
Issue number | 6 |
DOIs | |
State | Published - 2009 |
NREL Publication Number
- NREL/JA-520-46296
Keywords
- antimony
- band gap
- III-V semiconductors
- surfactants
- temperature measurement