CuSbSe2 Photovoltaic Devices with 3% Efficiency

Adam W. Welch, Lauryn L. Baranowski, Pawel Zawadzki, Stephan Lany, Colin A. Wolden, Andriy Zakutayev

Research output: Contribution to journalArticlepeer-review

84 Scopus Citations


Recent technical and commercial successes of existing thin-film solar cell technologies encourage the exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds that do not exhibit conventional tetrahedral semiconductor bonding, such as CuSbSe2. CuSbSe2 has a 1.1 eV optical absorption onset, a 105 cm-1 absorption coefficient, and a hole concentration of 1017 cm-3. Here, we demonstrate CuSbSe2 PV prototypes with efficiencies >3%, prepared by a self-regulated sputtering process using a conventional substrate device architecture. Bulk recombination, device engineering issues, and a nonideal CuSbSe2/CdS band offset likely limit the promising initial result.

Original languageAmerican English
Article number082301
Number of pages4
JournalApplied Physics Express
Issue number8
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015 The Japan Society of Applied Physics.

NREL Publication Number

  • NREL/JA-5K00-64428


  • absorber materials
  • CuSbSe2
  • PV
  • solar cell efficiency


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