CuSbSe2 Photovoltaic Devices with 3% Efficiency

Adam W. Welch; Lauryn L. Baranowski; Pawel Zawadzki; Stephan Lany; Colin A. Wolden; Andriy Zakutayev

doi:10.7567/APEX.8.082301

CuSbSe2 Photovoltaic Devices with 3% Efficiency

Adam W. Welch, Lauryn L. Baranowski, Pawel Zawadzki, Stephan Lany, Colin A. Wolden, Andriy Zakutayev

Materials Science

Research output: Contribution to journal › Article › peer-review

84 Scopus Citations

Abstract

Recent technical and commercial successes of existing thin-film solar cell technologies encourage the exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds that do not exhibit conventional tetrahedral semiconductor bonding, such as CuSbSe₂. CuSbSe₂ has a 1.1 eV optical absorption onset, a 10⁵ cm^-1 absorption coefficient, and a hole concentration of 10¹⁷ cm^-3. Here, we demonstrate CuSbSe₂ PV prototypes with efficiencies >3%, prepared by a self-regulated sputtering process using a conventional substrate device architecture. Bulk recombination, device engineering issues, and a nonideal CuSbSe₂/CdS band offset likely limit the promising initial result.

Original language	American English
Article number	082301
Number of pages	4
Journal	Applied Physics Express
Volume	8
Issue number	8
DOIs	https://doi.org/10.7567/APEX.8.082301 https://doi.org/10.7567/APEX.8.082301
State	Published - 2015

Bibliographical note

Publisher Copyright:
© 2015 The Japan Society of Applied Physics.

NREL Publication Number

NREL/JA-5K00-64428

Keywords

absorber materials
CuSbSe2
PV
solar cell efficiency

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title = "CuSbSe2 Photovoltaic Devices with 3% Efficiency",

abstract = "Recent technical and commercial successes of existing thin-film solar cell technologies encourage the exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds that do not exhibit conventional tetrahedral semiconductor bonding, such as CuSbSe2. CuSbSe2 has a 1.1 eV optical absorption onset, a 105 cm-1 absorption coefficient, and a hole concentration of 1017 cm-3. Here, we demonstrate CuSbSe2 PV prototypes with efficiencies >3%, prepared by a self-regulated sputtering process using a conventional substrate device architecture. Bulk recombination, device engineering issues, and a nonideal CuSbSe2/CdS band offset likely limit the promising initial result.",

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AU - Welch, Adam W.

AU - Baranowski, Lauryn L.

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AU - Wolden, Colin A.

AU - Zakutayev, Andriy

PY - 2015

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AB - Recent technical and commercial successes of existing thin-film solar cell technologies encourage the exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds that do not exhibit conventional tetrahedral semiconductor bonding, such as CuSbSe2. CuSbSe2 has a 1.1 eV optical absorption onset, a 105 cm-1 absorption coefficient, and a hole concentration of 1017 cm-3. Here, we demonstrate CuSbSe2 PV prototypes with efficiencies >3%, prepared by a self-regulated sputtering process using a conventional substrate device architecture. Bulk recombination, device engineering issues, and a nonideal CuSbSe2/CdS band offset likely limit the promising initial result.

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CuSbSe2 Photovoltaic Devices with 3% Efficiency

Abstract

Bibliographical note

NREL Publication Number

Keywords

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