CVD Nanocrystalline Silicon as Thermoelectric Material

William Nemeth (Inventor), Thomas Metcalf (Inventor), Xiao Liu (Inventor), Daniel Queen (Inventor), Battogtokh Jugdersuren (Inventor), Qi Wang (Inventor)

Research output: Patent


A process for forming a doped nc-Si thin film thermoelectric material. Anc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HW CVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R =80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having pre-determined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.
Original languageAmerican English
Patent number9,472,745 B2
Filing date18/10/16
StatePublished - 2016

NREL Publication Number

  • NREL/PT-5J00-70330


  • dopant
  • hot-wire CVD
  • nc-Si
  • plasma enhanced
  • thermoelectric
  • thin film


Dive into the research topics of 'CVD Nanocrystalline Silicon as Thermoelectric Material'. Together they form a unique fingerprint.

Cite this