CVD Nanocrystalline Silicon Thermoelectric Material

William Nemeth (Inventor), Xiao Liu (Inventor), Thomas Metcalf (Inventor), Daniel Queen (Inventor), Battogtokh Jugersuren (Inventor), Qi Wang (Inventor)

Research output: Patent


A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.
Original languageAmerican English
Patent number9,577,174
Filing date21/02/17
StatePublished - 2017

NREL Publication Number

  • NREL/PT-5J00-70246


  • annealing
  • dopants
  • doped nc-Si
  • electric
  • hot-wire CVD
  • plasma-enhanced
  • thermal
  • thermoelectric
  • thin film


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