Damp Heat Degradation of Polycrystalline Silicon Passivated Contacts

Research output: NRELPoster


After 1000 hours of damp heat exposure at 85% humidity and 85 C, LPCVD n-poly and p-poly are stable for both metallized and non-metallized regions whereas for PECVD, only n-poly is stable; PECVD p-poly suffers significant degradation and defects became more pronounced with exposure time; and PECVD p-poly degrades more than LPCVD p-poly with or without additional dielectric layers (i.e., SiNx + Al2O3 stack).
Original languageAmerican English
StatePublished - 2021

Publication series

NamePresented at the 11th International Conference on Crystalline Silicon Photovoltaics, 19-23 April 2021

NREL Publication Number

  • NREL/PO-5900-81029


  • damp heat degradation
  • low pressure chemical vapor deposited
  • p-Si
  • passivated contacts
  • photovoltaic
  • plasma enhanced chemical vapor deposited
  • polycrystalline silicon
  • PV


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