@misc{c20d1235fc104a2780310d884d60ffd7,
title = "Damp Heat Degradation of Polycrystalline Silicon Passivated Contacts",
abstract = "After 1000 hours of damp heat exposure at 85% humidity and 85 C, LPCVD n-poly and p-poly are stable for both metallized and non-metallized regions whereas for PECVD, only n-poly is stable; PECVD p-poly suffers significant degradation and defects became more pronounced with exposure time; and PECVD p-poly degrades more than LPCVD p-poly with or without additional dielectric layers (i.e., SiNx + Al2O3 stack).",
keywords = "damp heat degradation, low pressure chemical vapor deposited, LPCVD, p-Si, passivated contacts, PECVD, photovoltaic, plasma enhanced chemical vapor deposited, polycrystalline silicon, PV",
author = "San Theingi and William Nemeth and Harvey Guthrey and Matthew Page and Pauls Stradins and David Young",
year = "2021",
language = "American English",
series = "Presented at the 11th International Conference on Crystalline Silicon Photovoltaics, 19-23 April 2021",
type = "Other",
}
