Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Original languageAmerican English
    Title of host publicationTetrahedrally-Bonded Amorphous Semiconductors
    EditorsD. Adler, H. Fritzsche
    StatePublished - 1985

    Bibliographical note

    Work performed by Department of Physics, North Carolina State University, Raleigh, North Carolina

    NREL Publication Number

    • ACNR/CH-6756

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