Skip to main navigation
Skip to search
Skip to main content
National Renewable Energy Laboratory Hub Home
Hub Home
Researcher Profiles
Research Output
Research Organizations
Awards & Honors
Activities
Search by expertise, name, or affiliation
Dangling-Bond Levels and Structure Relaxation in Hydrogenated Amorphous Silicon
NREL
Research output
:
Contribution to journal
›
Article
›
peer-review
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Dangling-Bond Levels and Structure Relaxation in Hydrogenated Amorphous Silicon'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering
Hydrogenated Amorphous Silicon
100%
Dangling Bond
100%
State of Charge
20%
Local Structure
20%
Picosecond
20%
Energy Surface
20%
Electron Level
20%
Electron Capture
20%
Optical Transition
20%
Electron Emission
20%
Computer Simulation
20%
Nearest Neighbor
20%
Earth and Planetary Sciences
Amorphous Silicon
100%
Emissions
50%
Optical Transition
50%
Dynamic Simulation
50%
Electron Capture
50%
Timescale
50%
Material Science
Amorphous Silicon
100%
State-of-Charge
50%
Surface Energy
50%
Structural Relaxation
50%
Physics
Molecular Dynamics
100%
Amorphous Silicon
100%
Optical Transition
50%