Dark Current Transients in Thin-Film CdTe Solar Cells: Preprint

Research output: Contribution to conferencePaper


This conference paper describes the Dark current transients measured by changing the voltage bias in a stepwise fashion on CdTe cells results in minutes-long transients after each step. Transients measured at room temperature are controlled by carrier trapping that corresponds to the well known voltage transient phenomena [1]. Transients measured on the same CdTe cell at elevated temperature(60?C and 90?C) show a much slower decay process. We associate this physical process with 'shunt' current paths induced with reverse bias and removed with forward bias. A different back contact process may produce an opposite voltage dependence. The lack of these transients may be required for the fabrication of 'stable' thin-film CdTe solar cells.
Original languageAmerican English
Number of pages7
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002


Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-520-32194


  • back contacts
  • current voltage (I-V) curves
  • dark current transients
  • metal ion migration
  • PV
  • shunt paths
  • stable thin-film cdte solar cells


Dive into the research topics of 'Dark Current Transients in Thin-Film CdTe Solar Cells: Preprint'. Together they form a unique fingerprint.

Cite this