Deep Donor-Acceptor Pair Recombination in InGaAs-Based Heterostructures Grown on InP Substrates: Article No. 093708

Research output: Contribution to journal › Article › peer-review

NREL Publication Number

@article{903f9310a1014bc0b98b8f7b65a621be,

title = "Deep Donor-Acceptor Pair Recombination in InGaAs-Based Heterostructures Grown on InP Substrates: Article No. 093708",

author = "NREL",

year = "2005",

doi = "10.1063/1.2126153",

language = "American English",

volume = "98",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}