Deep-Level Impurities in CdTe/CdS Thin Film Solar Cells

A. Balcioglu, R. K. Ahrenkiel, F. Hasoon

Research output: Contribution to journalArticlepeer-review

139 Scopus Citations

Abstract

We have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole traps were observed. These traps are designated as El at EC-0.28 eV, H1 at EV+0.34 eV, and H2 at EV +0.45 eV. The presence of the E1 and H1 trap levels was confirmed by ODLTS. The H1 trap level is due to Cu-induced substitutional defects. The E1 trap level is believed to be a deep donor and is attributed to the doubly ionized interstitial Cu or a Cu complex. The E1 trap is an effective recombination center and is a lifetime killer.

Original languageAmerican English
Pages (from-to)7175-7178
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number12
DOIs
StatePublished - 2000

NREL Publication Number

  • NREL/JA-520-28493

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