Deep-Level Impurities in CdTe/CdS Thin Film Solar Cells

A. Balcioglu; R. K. Ahrenkiel; F. Hasoon

doi:10.1063/1.1326465

Deep-Level Impurities in CdTe/CdS Thin Film Solar Cells

A. Balcioglu, R. K. Ahrenkiel, F. Hasoon

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

145 Scopus Citations

Abstract

We have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole traps were observed. These traps are designated as El at E_C-0.28 eV, H1 at E_V+0.34 eV, and H2 at E_V +0.45 eV. The presence of the E1 and H1 trap levels was confirmed by ODLTS. The H1 trap level is due to Cu-induced substitutional defects. The E1 trap level is believed to be a deep donor and is attributed to the doubly ionized interstitial Cu or a Cu complex. The E1 trap is an effective recombination center and is a lifetime killer.

Original language	American English
Pages (from-to)	7175-7178
Number of pages	4
Journal	Journal of Applied Physics
Volume	88
Issue number	12
DOIs	https://doi.org/10.1063/1.1326465 https://doi.org/10.1063/1.1326465
State	Published - 2000

NREL Publication Number

NREL/JA-520-28493

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title = "Deep-Level Impurities in CdTe/CdS Thin Film Solar Cells",

abstract = "We have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole traps were observed. These traps are designated as El at EC-0.28 eV, H1 at EV+0.34 eV, and H2 at EV +0.45 eV. The presence of the E1 and H1 trap levels was confirmed by ODLTS. The H1 trap level is due to Cu-induced substitutional defects. The E1 trap level is believed to be a deep donor and is attributed to the doubly ionized interstitial Cu or a Cu complex. The E1 trap is an effective recombination center and is a lifetime killer.",

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AU - Ahrenkiel, R. K.

AU - Hasoon, F.

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N2 - We have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole traps were observed. These traps are designated as El at EC-0.28 eV, H1 at EV+0.34 eV, and H2 at EV +0.45 eV. The presence of the E1 and H1 trap levels was confirmed by ODLTS. The H1 trap level is due to Cu-induced substitutional defects. The E1 trap level is believed to be a deep donor and is attributed to the doubly ionized interstitial Cu or a Cu complex. The E1 trap is an effective recombination center and is a lifetime killer.

AB - We have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole traps were observed. These traps are designated as El at EC-0.28 eV, H1 at EV+0.34 eV, and H2 at EV +0.45 eV. The presence of the E1 and H1 trap levels was confirmed by ODLTS. The H1 trap level is due to Cu-induced substitutional defects. The E1 trap level is believed to be a deep donor and is attributed to the doubly ionized interstitial Cu or a Cu complex. The E1 trap is an effective recombination center and is a lifetime killer.

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Deep-Level Impurities in CdTe/CdS Thin Film Solar Cells

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