Deep Level Transient Spectroscopy and Capacitance-Voltage Measurements of Cu(In,Ga)Se2: Preprint

Research output: Contribution to conferencePaper

Abstract

This conference paper describes the electronic properties of ZnO/CdS/Cu(In,Ga)Se2 (CIGS)/Mo/SLG polycrystalline thin-film solar cells with compositions ranging from Cu-rich to In-rich were investigated by deep level transient spectroscopy and capacitance-voltage (C-V) measurements. This compositional change represents the evolution of the film during growth by the three-stage process. Fourthin-film CIGS samples with different Cu content were obtained. The Cu/(In+Ga) ratio ranges from 1.24 (Cu-rich)to 0.88 (In-rich), whereas the Ga/(In+Ga) ratio ranges from 0.19 (Cu-rich)to 0.28 (In-rich).The Cu-rich sample exhibits a shallow majority-carrier trap with an activation energy of 0.12 eV and another deeper trap with an activation energy of 0.28 eV, whereas the In-rich sample has ashallow minority-carrier trap with an activation energy of 0.12 eV. The two samples show evidence of a deeper trap at higher temperature. C-V measurements showed that the average carrier concentration (N values) around the junction of the cell changed as the film transitions from Cu-rich to In-rich. DLTS shows that acceptor-like traps are dominant in samples where CIGS grains did not go throughthe Cu-rich to In(Ga)-rich transition. While donor-like traps are dominant in the In(Ga)-rich samples.
Original languageAmerican English
Number of pages7
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002

Conference

Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana
Period20/05/0224/05/02

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-520-32205

Keywords

  • capacitance voltage (CV)
  • carrier concentration (n values)
  • Cu(In,Ga)Se2 (CIGS)
  • deep level transient spectroscopy (DLTS)
  • donor-like traps
  • growth kinetics
  • majority-carrier
  • polycrystalline thin-film solar cells
  • PV
  • substrate temperature profile
  • three-stage process

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