Deep Level Transient Spectroscopy and Photoluminescence Studies of Hole and Electron Traps in ZnSnP2 Bulk Crystals

Taro Kuwano; Ryoji Katsube; Steve Johnston; Adele Tamboli; Yoshitaro Nose

doi:10.35848/1347-4065/ac468a

Deep Level Transient Spectroscopy and Photoluminescence Studies of Hole and Electron Traps in ZnSnP2 Bulk Crystals

Taro Kuwano, Ryoji Katsube, Steve Johnston, Adele Tamboli, Yoshitaro Nose

Materials Science

Kyoto University

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

ZnSnP2, an emerging inorganic material for solar cells, was characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and donor-like traps with shallow energy levels were detected by DLTS analysis. The previous study based on first-principle calculation also suggested such traps were due to antisite defects of Zn and Sn. PL measurements also revealed sub-gap transitions related to these trap levels. Additionally, DLTS found a trap with a deep level in ZnSnP2. A short lifetime of minority carrier in previous work might be due to such trap, coming from phosphorus vacancies and/or zinc interstitials suggested by the first-principle study.

Original language	American English
Article number	020905
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	61
Issue number	2
DOIs	https://doi.org/10.35848/1347-4065/ac468a https://doi.org/10.35848/1347-4065/ac468a
State	Published - 2022

Bibliographical note

Publisher Copyright:
© 2022 The Japan Society of Applied Physics.

NREL Publication Number

NREL/JA-5K00-78346

Keywords

bulk crystals
deep levels transient spectroscopy
photoluminescence

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abstract = "ZnSnP2, an emerging inorganic material for solar cells, was characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and donor-like traps with shallow energy levels were detected by DLTS analysis. The previous study based on first-principle calculation also suggested such traps were due to antisite defects of Zn and Sn. PL measurements also revealed sub-gap transitions related to these trap levels. Additionally, DLTS found a trap with a deep level in ZnSnP2. A short lifetime of minority carrier in previous work might be due to such trap, coming from phosphorus vacancies and/or zinc interstitials suggested by the first-principle study.",

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AU - Katsube, Ryoji

AU - Johnston, Steve

AU - Tamboli, Adele

AU - Nose, Yoshitaro

PY - 2022

Y1 - 2022

N2 - ZnSnP2, an emerging inorganic material for solar cells, was characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and donor-like traps with shallow energy levels were detected by DLTS analysis. The previous study based on first-principle calculation also suggested such traps were due to antisite defects of Zn and Sn. PL measurements also revealed sub-gap transitions related to these trap levels. Additionally, DLTS found a trap with a deep level in ZnSnP2. A short lifetime of minority carrier in previous work might be due to such trap, coming from phosphorus vacancies and/or zinc interstitials suggested by the first-principle study.

AB - ZnSnP2, an emerging inorganic material for solar cells, was characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and donor-like traps with shallow energy levels were detected by DLTS analysis. The previous study based on first-principle calculation also suggested such traps were due to antisite defects of Zn and Sn. PL measurements also revealed sub-gap transitions related to these trap levels. Additionally, DLTS found a trap with a deep level in ZnSnP2. A short lifetime of minority carrier in previous work might be due to such trap, coming from phosphorus vacancies and/or zinc interstitials suggested by the first-principle study.

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Deep Level Transient Spectroscopy and Photoluminescence Studies of Hole and Electron Traps in ZnSnP2 Bulk Crystals

Abstract

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Keywords

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