Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs: Preprint

    Research output: Contribution to conferencePaper


    This conference paper describes the deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additionaldefects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.
    Original languageAmerican English
    Number of pages8
    StatePublished - 2002
    Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
    Duration: 20 May 200224 May 2002


    Conference29th IEEE PV Specialists Conference
    CityNew Orleans, Louisiana

    Bibliographical note

    Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana

    NREL Publication Number

    • NREL/CP-520-31401


    • Arrhenius plot
    • Boltzmann's constant
    • capacitance voltage (CV)
    • deep level transient spectroscopy (DLTS)
    • device performance
    • four-junction
    • metal-organic chemical vapor deposition (MOCVD)
    • PV
    • quasi-fermi level
    • quaternary semiconductors
    • Schottky barriers


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