Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs

S. W. Johnston; R. K. Ahrenkiel; D. J. Friedman; Sarah R. Kurtz

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs

S. W. Johnston, R. K. Ahrenkiel, D. J. Friedman, Sarah R. Kurtz

Research output: Contribution to conference › Paper › peer-review

12 Scopus Citations

Abstract

Deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semi-conductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having, varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

Original language	American English
Pages	1023-1026
Number of pages	4
State	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-31401

NREL Publication Number

NREL/CP-520-33728

Cite this

@conference{5b20b469e37b4ee6b1c240850cc5f526,

title = "Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs",

abstract = "Deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semi-conductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having, varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.",

author = "Johnston, {S. W.} and Ahrenkiel, {R. K.} and Friedman, {D. J.} and Kurtz, {Sarah R.}",

note = "For preprint version including full text online document, see NREL/CP-520-31401; 29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

pages = "1023--1026",

}

TY - CONF

T1 - Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs

AU - Johnston, S. W.

AU - Ahrenkiel, R. K.

AU - Friedman, D. J.

AU - Kurtz, Sarah R.

N1 - For preprint version including full text online document, see NREL/CP-520-31401

PY - 2002

Y1 - 2002

N2 - Deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semi-conductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having, varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

AB - Deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semi-conductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having, varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

UR - http://www.scopus.com/inward/record.url?scp=0036953453&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036953453

SP - 1023

EP - 1026

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs

Abstract

Conference

Bibliographical note

NREL Publication Number

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