Deep Nitrogen-Induced Valence- and Conduction-Band States in GaAs1-xNx: Article No. 035212

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	68
Issue number	03
DOIs	https://doi.org/10.1103/PhysRevB.68.035212
State	Published - 2003

NREL Publication Number

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title = "Deep Nitrogen-Induced Valence- and Conduction-Band States in GaAs1-xNx: Article No. 035212",

author = "NREL",

year = "2003",

doi = "10.1103/PhysRevB.68.035212",

language = "American English",

volume = "68",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "03",

}

TY - JOUR

T1 - Deep Nitrogen-Induced Valence- and Conduction-Band States in GaAs1-xNx

T2 - Article No. 035212

AU - NREL, null

PY - 2003

Y1 - 2003

U2 - 10.1103/PhysRevB.68.035212

DO - 10.1103/PhysRevB.68.035212

M3 - Article

SN - 1098-0121

VL - 68

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 03

ER -