Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint

Mowafak Al-Jassim; Steven Johnston; Katherine Zaunbrecher; Fei Yan

Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint

Mowafak Al-Jassim, Steven Johnston, Katherine Zaunbrecher, Fei Yan

Materials Science

Research output: Contribution to conference › Paper

Abstract

Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from thedefect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

Original language	American English
Number of pages	6
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference (PVSC 37) - Seattle, Washington Duration: 19 Jun 2011 → 24 Jun 2011

Conference

Conference	37th IEEE Photovoltaic Specialists Conference (PVSC 37)
City	Seattle, Washington
Period	19/06/11 → 24/06/11

NREL Publication Number

NREL/CP-5200-50725

Keywords

mult-crystalline silicon
photoluminescence imaging
PV
solar cells

Access to Document

https://www.nrel.gov/docs/fy11osti/50725.pdf

Cite this

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title = "Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint",

abstract = "Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from thedefect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.",

keywords = "mult-crystalline silicon, photoluminescence imaging, PV, solar cells",

author = "Mowafak Al-Jassim and Steven Johnston and Katherine Zaunbrecher and Fei Yan",

year = "2011",

language = "American English",

note = "37th IEEE Photovoltaic Specialists Conference (PVSC 37) ; Conference date: 19-06-2011 Through 24-06-2011",

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TY - CONF

T1 - Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint

AU - Al-Jassim, Mowafak

AU - Johnston, Steven

AU - Zaunbrecher, Katherine

AU - Yan, Fei

PY - 2011

Y1 - 2011

N2 - Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from thedefect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

AB - Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from thedefect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

KW - mult-crystalline silicon

KW - photoluminescence imaging

KW - PV

KW - solar cells

M3 - Paper

T2 - 37th IEEE Photovoltaic Specialists Conference (PVSC 37)

Y2 - 19 June 2011 through 24 June 2011

ER -

Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

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Cite this