Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells

Fei Yan, Steve Johnston, Katherine Zaunbrecher, Mowafak Al-Jassim, Omar Sidelkheir, Alain Blosse

Research output: Contribution to conferencePaperpeer-review

Abstract

Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

Original languageAmerican English
Pages2231-2235
Number of pages5
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA
Period19/06/1124/06/11

Bibliographical note

See NREL/CP-5200-50725 for preprint

NREL Publication Number

  • NREL/CP-5200-55771

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