Defect-Band Photoluminescence Imaging on Multi-Crystalline Silicon Wafers

Fei Yan, Steve Johnston, Katherine Zaunbrecher, Mowafak Al-Jassim, Omar Sidelkheir, Kamel Ounadjela

Research output: Contribution to journalArticle

12 Scopus Citations


Defect-band emission photoluminescence (PL) imaging with an indium-gallium-arsenide (InGaAs) camera was applied to multi-crystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from extend- ed defects were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters. (

Original languageAmerican English
Pages (from-to)190-192
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Issue number5
StatePublished - 2012

NREL Publication Number

  • NREL/JA-5200-55685


  • defects
  • photoluminescence imaging
  • silicon
  • solar cells


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