Defect-Band Photoluminescence Imaging on Multi-Crystalline Silicon Wafers

Fei Yan; Steve Johnston; Katherine Zaunbrecher; Mowafak Al-Jassim; Omar Sidelkheir; Kamel Ounadjela

doi:10.1002/pssr.201206068

Defect-Band Photoluminescence Imaging on Multi-Crystalline Silicon Wafers

Fei Yan, Steve Johnston, Katherine Zaunbrecher, Mowafak Al-Jassim, Omar Sidelkheir, Kamel Ounadjela

Materials Science

Research output: Contribution to journal › Article

12 Scopus Citations

Abstract

Defect-band emission photoluminescence (PL) imaging with an indium-gallium-arsenide (InGaAs) camera was applied to multi-crystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from extend- ed defects were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters. (

Original language	American English
Pages (from-to)	190-192
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	6
Issue number	5
DOIs	https://doi.org/10.1002/pssr.201206068 https://doi.org/10.1002/pssr.201206068
State	Published - 2012

NREL Publication Number

NREL/JA-5200-55685

Keywords

defects
photoluminescence imaging
silicon
solar cells

Access to Document

Cite this

@article{089cf65f9aa64db080a7523ee1ed7583,

title = "Defect-Band Photoluminescence Imaging on Multi-Crystalline Silicon Wafers",

abstract = "Defect-band emission photoluminescence (PL) imaging with an indium-gallium-arsenide (InGaAs) camera was applied to multi-crystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from extend- ed defects were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters. (",

keywords = "defects, photoluminescence imaging, silicon, solar cells",

author = "Fei Yan and Steve Johnston and Katherine Zaunbrecher and Mowafak Al-Jassim and Omar Sidelkheir and Kamel Ounadjela",

year = "2012",

doi = "10.1002/pssr.201206068",

language = "American English",

volume = "6",

pages = "190--192",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "5",

}

TY - JOUR

T1 - Defect-Band Photoluminescence Imaging on Multi-Crystalline Silicon Wafers

AU - Yan, Fei

AU - Johnston, Steve

AU - Zaunbrecher, Katherine

AU - Al-Jassim, Mowafak

AU - Sidelkheir, Omar

AU - Ounadjela, Kamel

PY - 2012

Y1 - 2012

N2 - Defect-band emission photoluminescence (PL) imaging with an indium-gallium-arsenide (InGaAs) camera was applied to multi-crystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from extend- ed defects were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters. (

AB - Defect-band emission photoluminescence (PL) imaging with an indium-gallium-arsenide (InGaAs) camera was applied to multi-crystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from extend- ed defects were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters. (

KW - defects

KW - photoluminescence imaging

KW - silicon

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=84860682555&partnerID=8YFLogxK

U2 - 10.1002/pssr.201206068

DO - 10.1002/pssr.201206068

M3 - Article

AN - SCOPUS:84860682555

SN - 1862-6254

VL - 6

SP - 190

EP - 192

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 5

ER -

Defect-Band Photoluminescence Imaging on Multi-Crystalline Silicon Wafers

Abstract

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this