Abstract
Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In1-xGax)3Se5(0<x<1) materials in polycrystalline thin-film form are reported. Also, an energy band alignment between such materials and CdS has been calculated from X-ray photoelectron spectroscopy data. A comparison of some properties against published data on similarly prepared chalcopyrite CuIn/sub 1-x/Ga/subx/Se/sub 2/ absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, we postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character--both structural and electrical--at the very chalcopyrite/defect chalcopyrite interface. We demonstrate that this situation can becircumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.
Original language | American English |
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Pages | 809-812 |
Number of pages | 4 |
DOIs | |
State | Published - 1996 |
Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
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City | Washington, D.C. |
Period | 13/05/96 → 17/05/96 |
NREL Publication Number
- NREL/CP-22407