Defect Chalcopyrite Cu(In1-xGax)3Se5 Polycrystalline Thin-Film Materials

The defect chalcopyrite material CuIn3Se5 has been identified as playing an essential role in efficient photovoltaic action in CuInSe2-based devices; it has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the Cu(In1-xGax)Se2 quaternary, knowledge of some physical properties of the Ga-containingdefect chalcopyrite Cu(In1-xGax)3Se5 may help us better understand the junction phenomena in such devices. Polycrystalline Cu(In1-xGax)3Se5 (with 0<x<1) thin films have been grown on 7059 Corning glass, soda-lime silica glass, n-type (100)Si, and Mo-coated soda-lime glass by coevaporation from elemental sources. In general, optical data show direct optical bandgaps that range from 1.20 eV forx=0 to .apprx.1.85 eV for x=1 (this represents .apprx.200 meV higher bandgaps than the Cu(In,Ga)Se2 counterparts). Micrographs of the thin films show a substantial change in morphology as the Ga content is increased--for identical conditions of growth rate and substrate temperature. X-ray diffraction patterns agree with previously publish data for the ternary case (x=0), where these materialshave been referred to as ordered vacancy compounds. Pole figures confirm a high degree of texturing in the films and a change in preferred orientation as Ga content is increased.