Defect Chemistry and Chalcogen Diffusion in Thin-Film Cu2ZnSnSe4 Materials

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Selenium diffusion in polycrystalline thin-film Cu2ZnSn(S,Se)4 (CZTSe) on molybdenum-coated soda-lime glass substrates was investigated by in situ monitoring of the molybdenum back-contact resistance during high-temperature selenization treatments. In these measurements, selenium diffusion through the CZTSe layer results in conversion of the molybdenum layer to MoSe2, increasing the sheet resistance of the film stack. By monitoring the rate of MoSe2 formation as a function of annealing temperature, an activation energy of 0.5 ± 0.1 eV has been measured for selenium diffusion in CZTSe. The partial pressure dependence of chalcogen diffusion suggests that chalcogen vacancies are not the defect controlling chalcogen diffusion in thin-film CZTSe.

Original languageAmerican English
Article numberArticle No. 074902
Number of pages7
JournalJournal of Applied Physics
Issue number7
StatePublished - 21 Feb 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5K00-62247


  • CZTS diffusion defect chemistry


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