Defect Reduction in MOCVD Grown Si/GaAs

Defect Reduction in MOCVD Grown Si/GaAs

Research output: Contribution to conference › Paper

Original language	American English
Pages	141-146
Number of pages	6
State	Published - 1988
Event	Materials Research Society Symposium - Reno, Nevada Duration: 5 Apr 1988 → 8 Apr 1988

Conference

Conference	Materials Research Society Symposium
City	Reno, Nevada
Period	5/04/88 → 8/04/88

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and NTT Optoelectronics Laboratories, Kanagawa, Japan

NREL Publication Number

ACNR/CP-213-11368

Cite this

@conference{5185b097a6154eebbde4163fefd6cf9b,

title = "Defect Reduction in MOCVD Grown Si/GaAs",

author = "NREL",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and NTT Optoelectronics Laboratories, Kanagawa, Japan; Materials Research Society Symposium ; Conference date: 05-04-1988 Through 08-04-1988",

year = "1988",

language = "American English",

pages = "141--146",

}