Defect States in Copper Indium Gallium Selenide Solar Cells from Two-Wavelength Excitation Photoluminescence Spectroscopy

Soeren Jensen, Patricia Dippo, Lorelle Mansfield, Stephen Glynn, Darius Kuciauskas, Patricia Dippo

Research output: Contribution to conferencePaperpeer-review

Abstract

We use two-wavelength excitation photoluminescence spectroscopy to probe defect states in CIGS thin films. Above-Eg excitation is combined with a tunable IR bias light that modulates the population of the defect states. We find that IR illumination in the range of 1400-2000 nm (0.62-0.89 eV) causes a reduction of the PL intensity, the magnitude of which scales linearly with IR power. Further, KF post deposition treatment has only a modest influence on the effect of the IR excitation. Initial data suggest that we have developed an optical characterization tool for band-gap defect states.

Original languageAmerican English
Pages3556-3558
Number of pages3
DOIs
StatePublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 201610 Jun 2016

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States
CityPortland
Period5/06/1610/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

  • NREL/CP-5900-65730

Keywords

  • CIGS
  • defects
  • PL spectroscopy
  • post deposition treatment
  • SRH recombination

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