Defect Study of Group V Doped CdTe By Thermoelectric Effect Spectroscopy

Santosh Swain; Kelvin Lynn

doi:10.1109/PVSC40753.2019.8980634

Defect Study of Group V Doped CdTe By Thermoelectric Effect Spectroscopy

Santosh Swain, Kelvin Lynn

Materials Science

Washington State University

Research output: Contribution to conference › Paper

Abstract

Shallow acceptors in single crystal CdTe induced by Group V (P, As, and Sb) doping are identified by thermoelectric effect spectroscopy (TEES). Understanding defects in Group V doped CdTe is critical to improving and controlling the acceptor density and lifetime in the absorber material which is an important factor determining the open circuit voltage and efficiency in CdTe solar cells.

Original language	American English
Pages	3063-3065
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980634
State	Published - 2020
Event	2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, Illinois Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
City	Chicago, Illinois
Period	16/06/19 → 21/06/19

NREL Publication Number

NREL/CP-5K00-76345

Keywords

CdTe defects
CdTe doping
TEES
thermoelectric effect spectroscopy

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10.1109/PVSC40753.2019.8980634

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title = "Defect Study of Group V Doped CdTe By Thermoelectric Effect Spectroscopy",

abstract = "Shallow acceptors in single crystal CdTe induced by Group V (P, As, and Sb) doping are identified by thermoelectric effect spectroscopy (TEES). Understanding defects in Group V doped CdTe is critical to improving and controlling the acceptor density and lifetime in the absorber material which is an important factor determining the open circuit voltage and efficiency in CdTe solar cells.",

keywords = "CdTe defects, CdTe doping, TEES, thermoelectric effect spectroscopy",

author = "Santosh Swain and Kelvin Lynn",

year = "2020",

doi = "10.1109/PVSC40753.2019.8980634",

language = "American English",

pages = "3063--3065",

note = "2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) ; Conference date: 16-06-2019 Through 21-06-2019",

}

TY - CONF

T1 - Defect Study of Group V Doped CdTe By Thermoelectric Effect Spectroscopy

AU - Swain, Santosh

AU - Lynn, Kelvin

PY - 2020

Y1 - 2020

N2 - Shallow acceptors in single crystal CdTe induced by Group V (P, As, and Sb) doping are identified by thermoelectric effect spectroscopy (TEES). Understanding defects in Group V doped CdTe is critical to improving and controlling the acceptor density and lifetime in the absorber material which is an important factor determining the open circuit voltage and efficiency in CdTe solar cells.

AB - Shallow acceptors in single crystal CdTe induced by Group V (P, As, and Sb) doping are identified by thermoelectric effect spectroscopy (TEES). Understanding defects in Group V doped CdTe is critical to improving and controlling the acceptor density and lifetime in the absorber material which is an important factor determining the open circuit voltage and efficiency in CdTe solar cells.

KW - CdTe defects

KW - CdTe doping

KW - TEES

KW - thermoelectric effect spectroscopy

U2 - 10.1109/PVSC40753.2019.8980634

DO - 10.1109/PVSC40753.2019.8980634

M3 - Paper

SP - 3063

EP - 3065

T2 - 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Y2 - 16 June 2019 through 21 June 2019

ER -

Defect Study of Group V Doped CdTe By Thermoelectric Effect Spectroscopy

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

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