Defects in Cd3As2 Epilayers via Molecular Beam Epitaxy and Strategies for Reducing Them: Article No. 121201(R)

Anthony Rice, Kirstin Alberi, Eamonn Hughes, Kunal Murkherjee, Kwangwook Park

Research output: Contribution to journalArticlepeer-review

15 Scopus Citations

Abstract

Molecular beam epitaxy offers an exciting avenue for investigating the behavior of the topological semimetal Cd3As2, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to constraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched ZnxCd1-xTe buffer layers, miscut substrates, and broadband illumination to study how dislocations, twins, and point defects influence the electron mobility of Cd3As2. A combination of defect suppression approaches produces Cd3As2 epilayers with electron mobilities upwards of 15000cm2/Vs at room temperature.
Original languageAmerican English
Number of pages6
JournalPhysical Review Materials
Volume3
Issue number12
DOIs
StatePublished - 2019

NREL Publication Number

  • NREL/JA-5K00-74891

Keywords

  • defects
  • II-VI semiconductors
  • molecular beam epitaxy
  • multilayer thin films
  • scanning electron microscopy
  • x-ray diffraction

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