Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint

Research output: Contribution to conferencePaper


I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOswork. Recent results on the surprising stability of polar (112) + surfaces of CIS will also be described in this context.
Original languageAmerican English
Number of pages7
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002


Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-590-32216


  • calculated formation energies
  • chalcopyrites
  • conduction band minimum
  • doping limit rule
  • dozinc-blende
  • n-type doping
  • oxides
  • PV
  • semiconductors


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