Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint

Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOswork. Recent results on the surprising stability of polar (112) + surfaces of CIS will also be described in this context.

Original language	American English
Number of pages	7
State	Published - 2002
Event	29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002

Conference

Conference	29th IEEE PV Specialists Conference
City	New Orleans, Louisiana
Period	20/05/02 → 24/05/02

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NREL Publication Number

NREL/CP-590-32216

Keywords

calculated formation energies
chalcopyrites
conduction band minimum
doping limit rule
dozinc-blende
n-type doping
oxides
PV
semiconductors

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://www.nrel.gov/docs/fy02osti/32216.pdf

Cite this

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title = "Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint",

abstract = "I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOswork. Recent results on the surprising stability of polar (112) + surfaces of CIS will also be described in this context.",

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author = "NREL",

note = "Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana; 29th IEEE PV Specialists Conference ; Conference date: 20-05-2002 Through 24-05-2002",

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language = "American English",

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N2 - I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOswork. Recent results on the surprising stability of polar (112) + surfaces of CIS will also be described in this context.

AB - I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOswork. Recent results on the surprising stability of polar (112) + surfaces of CIS will also be described in this context.

KW - calculated formation energies

KW - chalcopyrites

KW - conduction band minimum

KW - doping limit rule

KW - dozinc-blende

KW - n-type doping

KW - oxides

KW - PV

KW - semiconductors

M3 - Paper

T2 - 29th IEEE PV Specialists Conference

Y2 - 20 May 2002 through 24 May 2002

ER -

Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

Fingerprint

Cite this