Defects in RbF - Treated Cu(InxGal-x)Se2 Solar Cells and Their Impact on Voc

Michael Miller; Ana Kanevce; Alexandra Bothwell; Stefan Paetel; Darius Kuciauskas; Aaron Arehart

doi:10.1109/PVSC48320.2023.10359543

Defects in RbF - Treated Cu(InxGal-x)Se2 Solar Cells and Their Impact on Voc

Michael Miller, Ana Kanevce, Alexandra Bothwell, Stefan Paetel, Darius Kuciauskas, Aaron Arehart

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

Cu(In,Ga)Se2 solar cell efficiency is limited by VOC due in large part to bulk defects limiting lifetime, but alkali treatments such as RbF recover some of the VOC loss. In this work, defects in RbF-treated and untreated CIGS were quantitatively characterized using DLTS and DLOS, and three main defects were identified in each sample. The RbF-PDT resulted in a large decrease in the mid-gap trap concentration, which was accompanied by a large improvement in minority carrier lifetime. This lifetime improvement combined with a change in doping accounted for a significant portion of the VOC improvement in the RbF CIGS.

Original language	American English
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC48320.2023.10359543
State	Published - 2023
Event	2023 IEEE 50th Photovoltaic Specialists Conference (PVSC) - San Juan, Puerto Rico Duration: 11 Jun 2023 → 16 Jun 2023

Conference

Conference	2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)
City	San Juan, Puerto Rico
Period	11/06/23 → 16/06/23

NREL Publication Number

NREL/CP-5900-88879

Keywords

charge carrier lifetime
doping
integrated circuit modeling
limiting
photovoltaic cells
photovoltaic systems
semiconductor process modeling

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10.1109/PVSC48320.2023.10359543

Cite this

@conference{20b2758570b2458bbcab4fbb1ff77ed3,

title = "Defects in RbF - Treated Cu(InxGal-x)Se2 Solar Cells and Their Impact on Voc",

abstract = "Cu(In,Ga)Se2 solar cell efficiency is limited by VOC due in large part to bulk defects limiting lifetime, but alkali treatments such as RbF recover some of the VOC loss. In this work, defects in RbF-treated and untreated CIGS were quantitatively characterized using DLTS and DLOS, and three main defects were identified in each sample. The RbF-PDT resulted in a large decrease in the mid-gap trap concentration, which was accompanied by a large improvement in minority carrier lifetime. This lifetime improvement combined with a change in doping accounted for a significant portion of the VOC improvement in the RbF CIGS.",

keywords = "charge carrier lifetime, doping, integrated circuit modeling, limiting, photovoltaic cells, photovoltaic systems, semiconductor process modeling",

author = "Michael Miller and Ana Kanevce and Alexandra Bothwell and Stefan Paetel and Darius Kuciauskas and Aaron Arehart",

year = "2023",

doi = "10.1109/PVSC48320.2023.10359543",

language = "American English",

note = "2023 IEEE 50th Photovoltaic Specialists Conference (PVSC) ; Conference date: 11-06-2023 Through 16-06-2023",

}

TY - CONF

T1 - Defects in RbF - Treated Cu(InxGal-x)Se2 Solar Cells and Their Impact on Voc

AU - Miller, Michael

AU - Kanevce, Ana

AU - Bothwell, Alexandra

AU - Paetel, Stefan

AU - Kuciauskas, Darius

AU - Arehart, Aaron

PY - 2023

Y1 - 2023

N2 - Cu(In,Ga)Se2 solar cell efficiency is limited by VOC due in large part to bulk defects limiting lifetime, but alkali treatments such as RbF recover some of the VOC loss. In this work, defects in RbF-treated and untreated CIGS were quantitatively characterized using DLTS and DLOS, and three main defects were identified in each sample. The RbF-PDT resulted in a large decrease in the mid-gap trap concentration, which was accompanied by a large improvement in minority carrier lifetime. This lifetime improvement combined with a change in doping accounted for a significant portion of the VOC improvement in the RbF CIGS.

AB - Cu(In,Ga)Se2 solar cell efficiency is limited by VOC due in large part to bulk defects limiting lifetime, but alkali treatments such as RbF recover some of the VOC loss. In this work, defects in RbF-treated and untreated CIGS were quantitatively characterized using DLTS and DLOS, and three main defects were identified in each sample. The RbF-PDT resulted in a large decrease in the mid-gap trap concentration, which was accompanied by a large improvement in minority carrier lifetime. This lifetime improvement combined with a change in doping accounted for a significant portion of the VOC improvement in the RbF CIGS.

KW - charge carrier lifetime

KW - doping

KW - integrated circuit modeling

KW - limiting

KW - photovoltaic cells

KW - photovoltaic systems

KW - semiconductor process modeling

U2 - 10.1109/PVSC48320.2023.10359543

DO - 10.1109/PVSC48320.2023.10359543

M3 - Paper

T2 - 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)

Y2 - 11 June 2023 through 16 June 2023

ER -

Defects in RbF - Treated Cu(InxGal-x)Se2 Solar Cells and Their Impact on Voc

Abstract

Conference

NREL Publication Number

Keywords

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