Degradation Analysis of Weathered Crystalline-Silicon PV Modules: Preprint

Carl Osterwald

Research output: Contribution to conferencePaper


We present an analysis of the results of a solar weathering program that found a linear relationship between maximum power degradation and the total UV exposure dose for four different types of commercial crystalline Si modules. The average degradation rate for the four modules types was 0.71% per year. The analysis showed that losses of short-circuit current were responsible for the maximumpower degradation. Judging by the appearance of the undegraded control modules, it is very doubtful that the short-circuit current losses were caused by encapsulation browning or obscuration. When we compared the quantum efficiency of a single cell in a degraded module to one from an unexposed control module, it appears that most of the degradation has occurred in the 800 - 1100 nm wave-lengthregion, and not the short wavelength region.
Original languageAmerican English
Number of pages7
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002


Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-520-31455


  • degradation analysis
  • encapsulation browning
  • light-induced
  • manufacturers
  • PV
  • quantum efficiency (QE)
  • short circuit current (ISC)
  • standard global reference
  • weathered crystalline silicon


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