Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Elisabeth Mansfield, David Goggin, Jason Killgore, Taylor Aubry

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.

Original languageAmerican English
Pages (from-to)878-885
Number of pages8
JournalMRS Communications
Issue number5
StatePublished - Oct 2022

Bibliographical note

Publisher Copyright:
© 2022, This is a U.S. Government work and not under copyright protection in the US; foreign copyright protection may apply.

NREL Publication Number

  • NREL/JA-5900-83396


  • 2D materials
  • Durability
  • Electrical properties
  • Electronic material
  • SEM


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