Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Elisabeth Mansfield; David Goggin; Jason Killgore; Taylor Aubry

doi:10.1557/s43579-022-00261-x

Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Elisabeth Mansfield, David Goggin, Jason Killgore, Taylor Aubry

Chemistry and Nanoscience

United States Department of Commerce

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

Abstract

Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS₂ crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.

Original language	American English
Pages (from-to)	878-885
Number of pages	8
Journal	MRS Communications
Volume	12
Issue number	5
DOIs	https://doi.org/10.1557/s43579-022-00261-x https://doi.org/10.1557/s43579-022-00261-x
State	Published - Oct 2022

Bibliographical note

Publisher Copyright:
© 2022, This is a U.S. Government work and not under copyright protection in the US; foreign copyright protection may apply.

NREL Publication Number

NREL/JA-5900-83396

Keywords

2D materials
Durability
Electrical properties
Electronic material
SEM

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abstract = "Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.",

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AU - Goggin, David

AU - Killgore, Jason

AU - Aubry, Taylor

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N2 - Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.

AB - Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.

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KW - Durability

KW - Electrical properties

KW - Electronic material

KW - SEM

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Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Abstract

Bibliographical note

NREL Publication Number

Keywords

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