Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Myles Steiner; Emily Warren; Adele Tamboli; Marius Zehender; Ivan Garcia; Simon Svatek; Pablo Linares; Antonio Marti; Elisa Antolin

doi:10.1109/PVSC40753.2019.8980563

Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Myles Steiner, Emily Warren, Adele Tamboli, Marius Zehender, Ivan Garcia, Simon Svatek, Pablo Linares, Antonio Marti, Elisa Antolin

Technical University of Madrid

Research output: Contribution to conference › Paper › peer-review

8 Scopus Citations

Abstract

The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V_OC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V_OC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

Original language	American English
Pages	35-40
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980563 https://doi.org/10.1109/PVSC40753.2019.8980563
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5900-73145

Keywords

double junction
gallium arsenide
gallium indium phosphide
independent current
multi terminal
photovoltaic cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

Cite this

Steiner, M., Warren, E., Tamboli, A., Zehender, M., Garcia, I., Svatek, S., Linares, P., Marti, A., & Antolin, E. (2019). Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell. 35-40. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8980563, https://doi.org/10.1109/PVSC40753.2019.8980563

@conference{ae2f57024774423089954b59b5f7359b,

title = "Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell",

abstract = "The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.",

keywords = "double junction, gallium arsenide, gallium indium phosphide, independent current, multi terminal, photovoltaic cells",

author = "Myles Steiner and Emily Warren and Adele Tamboli and Marius Zehender and Ivan Garcia and Simon Svatek and Pablo Linares and Antonio Marti and Elisa Antolin",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980563",

language = "American English",

pages = "35--40",

}

Steiner, M , Warren, E, Tamboli, A, Zehender, M, Garcia, I, Svatek, S, Linares, P, Marti, A & Antolin, E 2019, 'Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 35-40. https://doi.org/10.1109/PVSC40753.2019.8980563, https://doi.org/10.1109/PVSC40753.2019.8980563

TY - CONF

T1 - Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

AU - Steiner, Myles

AU - Warren, Emily

AU - Tamboli, Adele

AU - Zehender, Marius

AU - Garcia, Ivan

AU - Svatek, Simon

AU - Linares, Pablo

AU - Marti, Antonio

AU - Antolin, Elisa

PY - 2019/6

Y1 - 2019/6

N2 - The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

AB - The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

KW - double junction

KW - gallium arsenide

KW - gallium indium phosphide

KW - independent current

KW - multi terminal

KW - photovoltaic cells

UR - http://www.scopus.com/inward/record.url?scp=85077217336&partnerID=8YFLogxK

U2 - 10.1109/PVSC40753.2019.8980563

DO - 10.1109/PVSC40753.2019.8980563

M3 - Paper

AN - SCOPUS:85077217336

SP - 35

EP - 40

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this