Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Myles Steiner, Emily Warren, Adele Tamboli, Marius Zehender, Ivan Garcia, Simon Svatek, Pablo Linares, Antonio Marti, Elisa Antolin

Research output: Contribution to conferencePaperpeer-review

7 Scopus Citations

Abstract

The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

Original languageAmerican English
Pages35-40
Number of pages6
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

  • NREL/CP-5900-73145

Keywords

  • double junction
  • gallium arsenide
  • gallium indium phosphide
  • independent current
  • multi terminal
  • photovoltaic cells

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