Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

Wondwosen Metaferia; Kevin Schulte; John Simon; David Guiling; Aaron Ptak

doi:10.1109/PVSC45281.2020.9300791

Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

Wondwosen Metaferia
, Kevin Schulte
, John Simon
, David Guiling
, Aaron Ptak

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of 27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al-containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.

Original language	American English
Pages	672-674
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300791 https://doi.org/10.1109/PVSC45281.2020.9300791
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NLR Publication Number

NREL/CP-5900-77040

Keywords

AlGaAs
HVPE
solar cell

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Cite this

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title = "Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE",

abstract = "We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of 27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al-containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.",

keywords = "AlGaAs, HVPE, solar cell",

author = "Wondwosen Metaferia and Kevin Schulte and John Simon and David Guiling and Aaron Ptak",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

year = "2020",

month = jun,

day = "14",

doi = "10.1109/PVSC45281.2020.9300791",

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}

Metaferia, W, Schulte, K , Simon, J , Guiling, D & Ptak, A 2020, 'Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 672-674. https://doi.org/10.1109/PVSC45281.2020.9300791, https://doi.org/10.1109/PVSC45281.2020.9300791

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T1 - Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

AU - Metaferia, Wondwosen

AU - Schulte, Kevin

AU - Simon, John

AU - Guiling, David

AU - Ptak, Aaron

PY - 2020/6/14

Y1 - 2020/6/14

N2 - We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of 27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al-containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.

AB - We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of 27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al-containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.

KW - AlGaAs

KW - HVPE

KW - solar cell

UR - https://www.scopus.com/pages/publications/85099600010

U2 - 10.1109/PVSC45281.2020.9300791

DO - 10.1109/PVSC45281.2020.9300791

M3 - Paper

AN - SCOPUS:85099600010

SP - 672

EP - 674

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

Abstract

Conference

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Keywords

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