Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

Engineering

• Low-Temperature 100%
• Passivation 100%
• Gallium Arsenide 50%
• Device Structure 50%
• Interface Recombination 50%
• Passivation Layer 50%
• Short-Circuit Current Density 50%
• Front Surface 50%
• Aluminium Gallium Arsenide 50%
• Low Growth Temperature 50%
• Growth Temperature 50%
• Band Gap 50%
• Solar Cell 50%

Material Science

• Vapor Phase Epitaxy 100%
• Hydride 100%
• Solar Cell 33%
• Electronic Circuit 33%
• Density 33%
• Surface Passivation 33%
• Gallium Arsenide 33%
• Antireflection Coating 33%
• Aluminium Gallium Arsenide 33%

Chemical Engineering

• Vapor Phase Epitaxy 100%
• Growth Temperature 66%
• Aluminum Gallium Arsenide 33%