The Density of States at GaAs/Native Oxide Interfaces

R. K. Ahrenkiel, D. J. Dunlavy

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The density of fast interface states were investigated by capacitance-voltage techniques for three native dielectrics grown on GaAs. The dielectrics are oxides grown by electrolytic and plasma anodization and oxyfluorides grown in an oxygen/fluorine plasma. C-V measurements were performed at frequencies from 100 Hz to 10 MHz and the capacitance dispersion was used to detect interface states. For oxide structures grown by either electrolytic or plasma anodization, state densities greater than 1013/cm2 occur at 0.15-0.25 eV above the valence band. The Fermi level is "pinned" in that region so that accumulation is never observed. For oxyfluorides, the densities are much lower with a peak density of 5 × 1012 at the valence band edge. Large state densities occur at frequencies between 1 and 10 MHz for oxides but not for oxyfluorides.

Original languageAmerican English
Pages (from-to)485-489
Number of pages5
JournalSolid State Electronics
Issue number5
StatePublished - 1984

NREL Publication Number

  • ACNR/JA-213-3579


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